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  this is information on a product in full production. this is information on a product in full production. april 2015 docid024570 rev 4 1/14 STL110NS3LLH7 n-channel 30 v, 0.0027 ? typ., 120 a stripfet? h7 power mosfet plus monolithic schottky in a powerflat? 5x6 datasheet - production data figure 1. internal schematic diagram features ? very low on-resistance ? very low q g ? high avalanche ruggedness ? embedded schottky diode applications ? switching applications description this device exhibits low on-state resistance and capacitance for improved conduction and switching performance. powerflat ? 5x6 1 2 3 4 am15540v3 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max i d STL110NS3LLH7 30 v 0.0034 120 a table 1. device summary order code marking package packing STL110NS3LLH7 110ns3ll powerflat tm 5x6 tape and reel www.st.com
contents STL110NS3LLH7 2/14 docid024570 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 powerflat? 5x6 type c package information . . . . . . . . . . . . . . . . . . . . . 9 4.2 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid024570 rev 4 3/14 STL110NS3LLH7 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. this value is rated according to r thj-c drain current (continuous) 120 a drain current (continuous) at t c = 100 c 75 i dm (1)(2) 2. pulse width limited by safe operating area. drain current (pulsed) 480 a i d (3) 3. this value is rated according to r thj-pcb drain current (continuous) 28 a drain current (continuous) at t pcb = 100 c 17.5 i dm (2)(3) drain current (pulsed) 112 a p tot total dissipation at t c = 25 c 75 (1) w total dissipation at t pcb = 25 c 4 (3) t stg storage temperature -55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb max 31.3 c/w r thj-case thermal resistance junction-case max 1.65 c/w
electrical characteristics STL110NS3LLH7 4/14 docid024570 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 m a , v gs = 0 v 30 v i dss zero gate voltage drain current v gs = 0 v v ds = 24 v 500 a i gss gate-body leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1.2 2.3 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 14 a 0.0027 0.0034 v gs = 4.5 v, i d = 14 a 0.004 0.005 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v -2110-pf c oss output capacitance - 640 - pf c rss reverse transfer capacitance -42-pf q g total gate charge v dd = 15 v, i d = 28 a, v gs = 4.5 v (see figure 11 ) - 13.7 - nc q gs gate-source charge - 7.5 - nc q gd gate-drain charge - 3.3 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 15 v, i d = 14 a, r g = 4.7 , v gs = 4.5 v -26.4- ns t r rise time - 10.4 - ns t d(off) turn-off delay time - 31.8 - ns t f fall time - 12.5 - ns
docid024570 rev 4 5/14 STL110NS3LLH7 electrical characteristics 14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2 a, v gs = 0 v - 0.4 0.7 v t rr reverse recovery time i d = 2 a, di/dt = 100 a/s v dd = 20 v - 35.2 ns q rr reverse recovery charge - 26.4 nc i rrm reverse recovery current - 1.5 a
electrical characteristics STL110NS3LLH7 6/14 docid024570 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance *,3*$/6             , '  $ 9 '6 9 2shudwlrqlqwklvduhdlv olplwhge\pd[5 '6 rq 7 m    ?&  7 f  ?&  v l q jo hsx o v h pv pv ?v ?v *,3*$/6             . w s v /  /  vlqjohsxovh /  /  /  f /  , '     9 '6 9 $ 9 9 9 *6 9    9 9        $0y , '       9 *6 9  $        9 '6 9   $0y 9 *6       4 j q& 9    9 '' 9 , ' $   $0y *,3*$/6            5 '6 rq p? , '  $ 9 *6  9
docid024570 rev 4 7/14 STL110NS3LLH7 electrical characteristics 14 figure 8. capacitance variations figure 9. normalized on-resistance vs temperature &       9 '6 9 s)  &lvv &rvv &uvv   $0y 5 '6 rq      7 m ?& qrup           , ' $ $0y
test circuits STL110NS3LLH7 8/14 docid024570 rev 4 3 test circuits figure 10. switching times test circuit for resistive load figure 11. gate charge test circuit figure 12. test circuit for inductive load switching and diode recovery times figure 13. unclamped inductive load test circuit figure 14. unclamped inductive waveform figure 15. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024570 rev 4 9/14 STL110NS3LLH7 package information 14 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 powerflat? 5x6 type c package information figure 16. powerflat? 5x6 type c outline bw\sh&b$(5b5hy 3lq lghqwlilfdwlrq 3lq lghqwlilfdwlrq    
package information STL110NS3LLH7 10/14 docid024570 rev 4 figure 17. powerflat? 5x6 recommended footprint (dimensions in mm) table 8. powerflat? 5x6 type c mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d5.20 e6.15 d2 4.11 4.31 e2 3.50 3.70 e1.27 e1 0.65 l 0.715 1.015 k 1.05 1.35 e3 2.35 2.55 e4 0.40 0.60 e5 0.08 0.28
docid024570 rev 4 11/14 STL110NS3LLH7 package information 14 4.2 packing information figure 18. powerflat? 5x6 tape (a) figure 19. powerflat? 5x6 package orientation in carrier tape a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
package information STL110NS3LLH7 12/14 docid024570 rev 4 figure 20. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
docid024570 rev 4 13/14 STL110NS3LLH7 revision history 14 5 revision history table 9. document revision history date revision changes 22-apr-2013 1 first release. 11-jun-2013 2 changed: description minor text changes 01-apr-2015 3 minor text edits throughout document on cover page: ? updated product description ? updated features table and features list in section 1: electrical ratings : ? updated table 2 and table 3 in section 2: electrical characteristics : ? updated table 7 added section 2.1: electrical characteristics (curves) updated section 4: package information 10-apr-2015 4 promoted document from ?preliminary data? to ?production data?
STL110NS3LLH7 14/14 docid024570 rev 4 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved


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