|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
this is information on a product in full production. this is information on a product in full production. april 2015 docid024570 rev 4 1/14 STL110NS3LLH7 n-channel 30 v, 0.0027 ? typ., 120 a stripfet? h7 power mosfet plus monolithic schottky in a powerflat? 5x6 datasheet - production data figure 1. internal schematic diagram features ? very low on-resistance ? very low q g ? high avalanche ruggedness ? embedded schottky diode applications ? switching applications description this device exhibits low on-state resistance and capacitance for improved conduction and switching performance. powerflat ? 5x6 1 2 3 4 am15540v3 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max i d STL110NS3LLH7 30 v 0.0034 120 a table 1. device summary order code marking package packing STL110NS3LLH7 110ns3ll powerflat tm 5x6 tape and reel www.st.com
contents STL110NS3LLH7 2/14 docid024570 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 powerflat? 5x6 type c package information . . . . . . . . . . . . . . . . . . . . . 9 4.2 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 docid024570 rev 4 3/14 STL110NS3LLH7 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. this value is rated according to r thj-c drain current (continuous) 120 a drain current (continuous) at t c = 100 c 75 i dm (1)(2) 2. pulse width limited by safe operating area. drain current (pulsed) 480 a i d (3) 3. this value is rated according to r thj-pcb drain current (continuous) 28 a drain current (continuous) at t pcb = 100 c 17.5 i dm (2)(3) drain current (pulsed) 112 a p tot total dissipation at t c = 25 c 75 (1) w total dissipation at t pcb = 25 c 4 (3) t stg storage temperature -55 to 150 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2oz cu, t < 10 sec thermal resistance junction-pcb max 31.3 c/w r thj-case thermal resistance junction-case max 1.65 c/w electrical characteristics STL110NS3LLH7 4/14 docid024570 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 m a , v gs = 0 v 30 v i dss zero gate voltage drain current v gs = 0 v v ds = 24 v 500 a i gss gate-body leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1.2 2.3 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 14 a 0.0027 0.0034 v gs = 4.5 v, i d = 14 a 0.004 0.005 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v -2110-pf c oss output capacitance - 640 - pf c rss reverse transfer capacitance -42-pf q g total gate charge v dd = 15 v, i d = 28 a, v gs = 4.5 v (see figure 11 ) - 13.7 - nc q gs gate-source charge - 7.5 - nc q gd gate-drain charge - 3.3 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 15 v, i d = 14 a, r g = 4.7 , v gs = 4.5 v -26.4- ns t r rise time - 10.4 - ns t d(off) turn-off delay time - 31.8 - ns t f fall time - 12.5 - ns docid024570 rev 4 5/14 STL110NS3LLH7 electrical characteristics 14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 2 a, v gs = 0 v - 0.4 0.7 v t rr reverse recovery time i d = 2 a, di/dt = 100 a/s v dd = 20 v - 35.2 ns q rr reverse recovery charge - 26.4 nc i rrm reverse recovery current - 1.5 a electrical characteristics STL110NS3LLH7 6/14 docid024570 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance * , 3 * $ / 6 , ' $ 9 ' 6 9 2 s h u d w l r q l q w k l v d u h d l v o l p l w h g e \ p d [ 5 ' 6 r q 7 m ? & 7 f ? & v l q j o h s x o v h p v p v ? v ? v * , 3 * $ / 6 . w s v / / v l q j o h s x o v h / / / f / , ' 9 ' 6 9 $ 9 9 9 * 6 9 9 9 $ 0 y , ' 9 * 6 9 $ 9 ' 6 9 $ 0 y 9 * 6 4 j q & |